A structure of a CMOS image sensory device is described. A photodiode sensory
region
and a transistor device region are isolated from each other by an isolation layer
formed in the substrate. A gate structure is located on the transistor device region,
and a source/drain region is in the transistor device region beside the side of
the gate structure. A doped region is in the photodiode sensory region. A self-aligned
block is located on the photodiode sensory region and a protective layer is formed
on the entire substrate.
