A semiconductor structure 300 comprises a plurality of first track conductors
303, a plurality of second track conductors 304, which are insulated
with respect to the first track conductors 303 and form a grid together
with these first track conductors 303, and a plurality of third track conductors
307 parallel above the first track conductors 303, which third track
conductors 307 partly cover the second track conductors 304 and are
insulated with respect thereto, in which semiconductor structure 300, between
in each case two adjacent second track conductors 304, there is located
an electrical contact 305 between each first track conductor 303 and
the corresponding third track conductor 307 which lies above it.
