A semiconductor device comprising a semiconductor body having a top surface and
laterally opposite sidewalls is formed on an insulating substrate. A gate dielectric
layer is formed on the top surface of the semiconductor body and on the laterally
opposite sidewalls of the semiconductor body. A gate electrode is formed on the
gate dielectric on the top surface of the semiconductor body and is formed adjacent
to the gate dielectric on the laterally opposite sidewalls of the semiconductor
body. A thin film is then formed adjacent to the semiconductor body wherein the
thin film produces a stress in the semiconductor body.
