There are contained the steps of forming sequentially a first conductive film,
a dielectric film, and a second conductive film on a first insulating film, forming
an upper electrode of a capacitor by patterning the second conductive film, patterning
the dielectric film to leave under the upper electrode, forming a lower electrode
of the capacitor by patterning the first conductive film, covering the capacitor
and the first insulating film with a second insulating film, and annealing at least
one of the first insulating film and the second insulating film in an inert-gas
atmosphere and then exposing the film to an N2O plasma.
