A circuit element that includes a ferroelectric device connected to a substrate
device. The circuit element is constructed by fabricating the substrate device
in a semiconductor substrate and depositing a dielectric layer over the semiconductor
substrate. A via is then etched in the dielectric layer to provide access to the
substrate device and filled with copper or tungsten. A layer of a conducting metallic
oxide is then deposited on the conducting plug, and a layer of ferroelectric material
is deposited on the layer of conducting metal oxide. The layer of conducting metallic
oxide is deposited at a temperature below 450 C., preferably at room temperature.
