A sensing circuit comprises a charge integrating sense amplifier 4 serially
coupled to a discriminator 6. The sensing circuit can be used to sense the
logic status of the cells in a random access memory (RAM) system, including ferroelectric
RAMs. The use of a charge integrating sense amplifier enables the effect of bit
line capacitance intrinsic to RAM circuits to be overcome and also provides efficient
charge to voltage conversion gain.
