Active areas of a Dynamic Random Access Memory (DRAM) formed on a semiconductor
substrate are defined by buried bit lines on two sides and by conductors separated
from the semiconductor substrate by electrically insulating layers on two other
sides. The conductors are electrically biased during operation of the DRAM to cause
portions of the semiconductor substrate therebelow to increase in majority carrier
concentration and thus to inhibit inversion thereof. Each buried bit line is formed
in a trench in the semiconductor substrate. Each trench houses a separate bit line
and is lined with an electrical insulator and has a conductor in a bottom portion thereof.
