A method of making a semiconductor device comprising: providing a semiconductor
substrate having a plurality of discrete devices formed therein, and a plurality
of metal layers and support layers, the support layers comprising an uppermost
support layer and other support layers, and wherein each metal layer has an associated
support layer having at least a portion underlying the metal layer, and wherein
the plurality of metal layers includes an uppermost metal layer including a sealing
pad having an opening therethrough, and a passivation layer having at least one
opening therein exposing a portion of the sealing pad including the opening therethrough,
and the uppermost support layer having a portion exposed through the opening in
the sealing pad; exposing the uppermost support layer to an etching material through
the opening in the sealing pad and etching away the support layers; and sealing
the opening in the sealing pad.
