The present invention provides a structure for a semiconductor device, capable
of eliminating the generation of defective products due to poor connection. In
the present semiconductor device, an n-type high concentration diffusion layer
2 is selectively formed on the P-type silicon substrate 1, and on
the diffusion layer 2, a silicon oxide film 3 is formed as a first
interlayer insulating film 3. A silicon plug 4 is disposed on the
n-type high concentration diffusion layer 2. On the top end surface of the
polysilicon plug 4, a silicide pad 5 is formed in a self-aligning
manner such that the width of the silicide pad 5 is larger than that of
the polysilicon plug 4. A second interlayer insulating film is formed so
as to cover the first interlayer insulating film 3 and the silicide pad
5, and a tungsten plug 7 is disposed on the silicide pad 5. On
the second interlayer insulating film, wiring 8, made of an aluminum-copper
alloy and connected to the tungsten plug, is formed.
