A semiconductor device protecting the ends of a gate line and a method of forming
the same are disclosed. The semiconductor device includes a semiconductor substrate,
a gate line crossing over the semiconductor substrate, and a protecting pattern
covering ends of the gate line. According to the method, a gate line is formed
at a semiconductor substrate. A spacer is formed to cover sidewalls of the gate
line. A protecting pattern is formed to cover the ends of the gate line. The protecting
pattern may be formed of silicon nitride or silicon oxide. Since the protecting
pattern protects ends of a gate line, it is possible to prevent gate electrodes
from being damaged by a cleaning solution such as SC1 in a subsequent process.
