A method of forming a semiconductor device includes forming a body region of a
semiconductor substrate and forming a drift region adjacent at least a portion
of the body region. A dopant is used to form the drift region. The dopant may comprise
phosphorous. The method also includes forming a field oxide structure adjacent
a portion of the drift region and a portion of a drain region. The field oxide
structure is located between a gate electrode region and the drain region and is
spaced apart from the gate electrode region. Atoms of the dopant accumulate adjacent
a portion of the field oxide structure, forming an intermediate-doped region adjacent
a portion of the field oxide structure. The method includes forming a gate oxide
adjacent a portion of the body region and forming a gate electrode adjacent a portion
of the gate oxide.
