The invention concerns a low-capacity vertical diode designed to be mounted by
a front surface made in a semiconductor substrate (1), comprising a first
zone projecting relative to the surface of the substrate including at least a semiconductor
layer (3) doped with a type of conductivity opposite to that of the substrate,
the upper surface of the semiconductor layer bearing a first solder bump (23).
The diode comprises a second zone including on the substrate a thick strip conductor
(16) bearing at least second solder bumps (24), said first and second
solder bumps defining a plane parallel to the substrate plane.
