A low-dielectric-constant interlayer insulating film, which is composed of at
least
one selected from the group consisting of: (i) a low-dielectric-constant borazine-silicon-based
polymer substance obtainable by reaction of, in the presence of a platinum catalyst,
B,B,B";-triethynyl-N,N,N";-trimethylborazine with a specific silicon
compound having at least two hydrosilyl groups; and (ii) a low-dielectric-constant
borazine-silicon-based polymer substance obtainable by reaction of, in the presence
of a platinum catalyst, B,B,B";-triethynyl-N,N,N";-trimethylborazine
with a specific cyclic silicon compound having at least two hydrosilyl groups.
A semiconductor device, which has the low-dielectric-constant interlayer insulating
film. A low-refractive-index material, which is composed of the polymer substance
(i) and/or (ii).
