A method and apparatus for a semiconductor device having increased electrical
carrier
mobility is described. That method and apparatus comprises forming two recesses
within a substrate, and providing a material within the two recesses. The material
has a predetermined coefficient of thermal expansion (CTE) to facilitate introduction
of a predetermined strain within the substrate in a location between the two recesses.
Also described is a semiconductor device that comprises a substrate having two
recesses formed therein, and a material disposed within the two recesses. The material
has a predetermined coefficient of thermal expansion (CTE) to facilitate introduction
of a predetermined strain within the substrate in a location between the two recesses.
