A semiconductor photodetection device includes a semiconductor structure including
an optical absorption layer having a photo-incidence surface on a first side thereof,
a dielectric reflecting layer formed on a second side of the semiconductor structure
opposite to the first side, a contact electrode surrounding the dielectric reflecting
layer and contacting with the semiconductor structure, and a close contact electrode
covering the dielectric reflecting layer and contacting with the contact electrode
and the dielectric reflecting layer, wherein the close contact electrode adheres
to the dielectric reflecting layer more strongly than to the contact electrode.
