A semiconductor laser, a semiconductor device and a nitride series III-V
group compound substrate capable of obtaining a crystal growth layer with
less fluctuation of the crystallographic axes and capable of improving the
device characteristics, as well as a manufacturing method therefor are
provided. The semiconductor laser comprises, on one surface of a substrate
used for growing, a plurality of spaced apart seed crystal layers and an
n-side contact layer having a lateral growing region which is grown on the
basis of the plurality of seed crystal layers. The seed crystal layer is
formed in that a product of width w.sub.1 (unit: .mu.m) at the boundary
thereof relative to the n-side contact layer along the arranging direction
A and a thickness t.sub.1 (unit: .mu.m) along the direction of laminating
the n-side contact layer is 15 or less.
A semiconductor layer comprising a nitride series III-V group compound
semiconductor is laminated on a substrate 11 comprising an n-type GaN.
Protruded seed crystal portions are formed and a growth suppression layer
having an opening corresponding to the seed crystal portion is disposed to
the substrate. The semiconductor layer grows on the basis of the seed
crystal portion and has a lateral growing region of low dislocation
density.
