The present invention provides a ferroelectric memory device and a manufacturing
method forming the same capable of preventing characteristic deterioration of a
ferroelectric layer due to an plasma. The ferroelectric memory device divided into
a first area including a plurality of ferroelectric capacitor and a second area
not including the ferroelectric capacitor, includes a semiconductor substrate;
a first insulating layer formed on the semiconductor substrate; and a bottom electrode
of the ferroelectric capacitor formed in the first insulating layer, wherein a
top surface of the bottom electrode is planarized with the first insulating layer;
a ferroelectric layer of the ferroelectric capacitor covering not only the bottom
electrode but also all the first area; and a top electrode of the ferroelectric
capacitor formed on the ferroelectric layer and overlapped with the bottom electrode.
