A nitride-based semiconductor laser device capable of preventing deterioration
in the vicinity of a facet is obtained. This nitride-based semiconductor laser
device comprises a first conductivity type first cladding layer consisting of a
nitride-based semiconductor formed on a substrate, an active layer formed on the
first cladding layer, a second conductivity type second cladding layer consisting
of a nitride-based semiconductor formed on the active layer and a high-resistance
region formed at least portions of the active layer and the second cladding layer
in the vicinity of the facet. The high-resistance region has higher resistance
than the remaining regions, whereby a current hardly flows to the high-resistance
region. Thus, temperature increase is suppressed in the vicinity of the facet,
whereby deterioration can be prevented in the vicinity of the facet.
