Thin film magnetic memory device and semiconductor integrated circuit device including the same as one of circuit blocks

   
   

Shape dummy cells that are designed to have the same dimensions and structures as MTJ memory cells are additionally provided in the peripheral portion of an MTJ memory cell array in which normal MTJ memory cells for storing data are arranged in a matrix. The MTJ memory cells and the shape dummy cells are sequentially arranged so as to have a uniform pitch throughout the entirety. Accordingly, non-uniformity between MTJ memory cells in the center portion and in border portions of the MTJ memory cell array, respectively, after manufacture due to high and low densities of the surrounding memory cells can be eliminated.

 
Web www.patentalert.com

< Layout for thermally selected cross-point MRAM cell

< Thin film magnetic memory device capable of conducting stable data read and write operations

> Method for adaptively writing a magnetic random access memory

> Semiconductor device

~ 00199