A method of forming a high dielectric oxide film conventionally formed using a
post formation oxygen anneal to reduce the leakage current of such film includes
forming a high dielectric oxide film on a surface. The high dielectric oxide film
has a dielectric constant greater than about 4 and includes a plurality of oxygen
vacancies present during the formation of the film. The high dielectric oxide film
is exposed during the formation thereof to an amount of atomic oxygen sufficient
for reducing the number of oxygen vacancies and eliminating the post formation
oxygen anneal of the high dielectric oxide film. Further, the amount of atomic
oxygen used in the formation method may be controlled as a function of the amount
of oxygen incorporated into the high dielectric oxide film during the formation
thereof or be controlled as a function of the concentration of atomic oxygen in
a process chamber in which the high dielectric oxide film is being formed. An apparatus
for forming the high dielectric oxide film is also described.
