Methods are provided for depositing a dielectric material. The dielectric
material may be used for an anti-reflective coating or as a hardmask. In one aspect,
a method is provided for processing a substrate including introducing a processing
gas comprising a silane-based compound and an oxygen and carbon containing compound
to the processing chamber and reacting the processing gas to deposit a nitrogen-free
dielectric material on the substrate. The dielectric material comprises silicon
and oxygen. In another aspect, the dielectric material forms one or both layers
in a dual layer anti-reflective coating.
