Cleaning method and solution for cleaning a wafer in a single wafer process

The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH₄OH), hydrogen peroxide (H₂O₂), water (H₂O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H₂. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.