A power Schottky rectifier device and method of making the same are disclosed. The Schottky rectifier device including a LOCOS structure and two p-type doping regions, which are positioned one above another therein to isolate cells so as to avoid premature of breakdown voltage. The Schottky rectifier device comprises: an n- drift layer formed on an n+ substrate; a cathode metal layer formed on a surface of the n+ substrate opposite the n- drift layer; a pair of field oxide regions and termination region formed into the n- drift layer and each spaced from each other by the mesas, where the mesas have metal silicide layer formed thereon. A top metal layer formed on the field oxide regions and termination region and contact with the silicide layer. Under each of field oxide regions and termination region is a p doped and p- doped region cascade which provide depleted regions enclosed the p- doped regions to blocking the leakage current while a reverse bias voltage is exerted to the Schottky power rectifier diode.