The present invention relates to a method of and an apparatus for forming a thin
metal film of copper, silver, or the like on a surface of a semiconductor or another
substrate. A method of forming a thin metal film, comprises preparing a dispersed
liquid having a metal-containing organic compound dispersed in a predetermined
solvent, coating the dispersed liquid on a surface of a substrate and evaporating
the solvent to form a coating layer, and applying an energy beam to the coating
layer to decompose away an organic substance contained in the coating layer in
an area irradiated with the energy beam and bond metal contained in the coating
layer.According to the present invention, it is possible to form a thin metal film
of good quality efficiently and stably. The thin metal film used as metal interconnects
in highly integrated semiconductor circuits contributes to the progress of a process
of fabricating semiconductor devices.