A method for forming a semiconductor die, comprising forming a trench in a surface
of the die; filing the trench with a sacrificial material; patterning the die to
form a series of channels extending substantially perpendicularly to the trench;
depositing a conductive material in the channels; removing at least a portion of
the sacrificial material; and removing portions of the die under the trench so
as to separate a portion of the die on one side of the trench from a portion on
another side of the trench. The sacrificial material may be patterned so that the
channels extend so as to be partially in a portion of the die and partially a portion
of the sacrificial material. A series of structures are formed having dies with micro-pins.