A method for forming a semiconductor die, comprising forming a trench in a surface of the die; filing the trench with a sacrificial material; patterning the die to form a series of channels extending substantially perpendicularly to the trench; depositing a conductive material in the channels; removing at least a portion of the sacrificial material; and removing portions of the die under the trench so as to separate a portion of the die on one side of the trench from a portion on another side of the trench. The sacrificial material may be patterned so that the channels extend so as to be partially in a portion of the die and partially a portion of the sacrificial material. A series of structures are formed having dies with micro-pins.