An electrode on a semiconductor substrate includes a polysilicon layer, a silicon-implanted layer on the polysilicon layer, a tungsten nitride layer on the silicon-implanted layer, a tungsten nitride layer on the silicon-implanted layer, and a tungsten layer on the tungsten nitride layer. The layer between the polysilicon layer and the tungsten nitride layer may be either a tungsten silicon nitride layer or a silicon-germanium layer.

 
Web www.patentalert.com

< Semiconductor component with optimized current density

< Semiconductor device with modified channel compressive stress

> Optoelectronic semiconductor component having multiple external connections

> Semiconductor radiation detector having voltage application means comprises InxCdyTez on CdTe semiconductor substrate
~ 00226