A production process for a semiconductor device having a metal electrode on a
semiconductor
substrate thereof. A metal electrode portion is formed on a surface of another
substrate for electrode transfer. Then, the metal electrode portion is transferred
from the electrode transfer substrate onto the semiconductor substrate by pressing
together the electrode transfer substrate and the semiconductor substrate. The
electrode transfer substrate has, for example, a seed film provided on the surface
thereof, and the formation of the metal electrode portion on the electrode transfer
substrate may be achieved by depositing a material for the metal electrode on the
seed film by plating. The electrode transfer substrate may have an insulating film
which covers a surface of the seed film except a portion thereof on which the metal
electrode portion is to be formed.