A method and system for enhancing the reliability of a solid-state storage device based on electronic memory. The electronic memory is organized into low-address and high-address spare table regions, low-address and high-address spare page regions, and a large data page region. Data blocks within the memory are specified by accessing devices using a logical data block address, including a page index and a data block index. The page index selects a particular spare table, a particular spare page, and a particular data page. The data block index selects a spare table element within the spare table, and a data block within a data page. When an LDBA has been remapped, information in a corresponding spare table element is used to locate a physical block within a spare page.