A profile model for use in optical metrology of structures in a wafer is selected based on a template having one or more parameters including characteristics of process and modeling attributes associated with a structure in a wafer. The process includes performing a profile modeling process to generate a profile model of a wafer structure based on a template having one or more parameters including characteristics of process and modeling attributes. The profile model includes a set of geometric parameters associated with the dimensions of the structure. The generated profile model may further be tested against termination criteria and the one or more parameters modified. The process of performing a modeling process to generate a profile model and testing the generated profile model may be repeated until the termination criteria are met.

 
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