An electronic component is disclosed having a first layer of metallically
conductive material, a second layer of semiconductor material, and a
third layer between the first and second layers. The third layer
comprises a dielectric and at least inhibits charge carrier transport
both from the first to the second layer and also from the second to the
first layer. The dielectric comprises praseodymium oxide of the form
Pr.sub.2O.sub.3 in predominantly single crystal phase, and the second
layer comprises silicon with a (001)- or with a (111)-crystal orientation
at an interface with the third-layer.