A phase change material may be formed within a trench in a first layer to
form a damascene memory element and in an overlying layer to form a
threshold device. Below the first layer may be a wall heater. The wall
heater that heats the overlying phase change material may be formed in a
U-shape in some embodiments of the present invention. The phase change
material for the memory element may be elongated in one direction to
provide greater alignment tolerances with said heater and said threshold
device.