A method of manufacturing a flash memory device, including the steps of
laminating a tunnel oxide film and a first polysilicon layer on a region
of a semiconductor substrate, and forming isolation films having a step
with a first polysilicon layer between the tunnel oxide film and the
first polysilicon layer; forming insulating film spacers on sidewalls of
the isolation films and then depositing a second polysilicon layer on the
entire structure; and, etching the second polysilicon layer with a slope
using a mask, thus forming a floating gate, and then forming a conductive
layer on the entire structure, wherein the second polysilicon layer is
etched up to the tunnel oxide film. The insulating film spacers are
formed on the sidewalls of the isolation films so that they serve as
barriers when the floating gate is etched. The etch depth of the floating
gate can be deeply formed, making it possible to reduce the inter-cell
interference phenomenon.