A sintered body with a composition consisting of 25% to 35% by weight of R (wherein R represents one or more rare earth elements, providing that the rare earth elements include Y), 0.5% to 4.5% by weight of B, 0.02% to 0.6% by weight of Al and/or Cu, 0.03% to 0.25% by weight of Zr, 4% or less by weight (excluding 0) of Co, and the balance substantially being Fe, wherein a coefficient of variation (CV) showing the dispersion of Zr is 130 or lower. This sintered body enables to inhibit the grain growth, while keeping the decrease of magnetic properties to a minimum, and to improve the suitable sintering temperature range.

 
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> Method for reducing non-uniformity or topography variation between an array and circuitry in a process for manufacturing semiconductor integrated non-volatile memory devices

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