A method of ion implanting a species in a workpiece to a selected ion
implantation profile depth includes placing a workpiece having a
semiconductor material on an electrostatic chuck in or near a processing
region of a plasma reactor chamber and applying a chucking voltage to the
electrostatic chuck. The method further includes introducing into the
chamber a precursor gas including a species to be ion implanted in the
workpiece and applying an RF bias to the electrostatic chuck, the RF bias
having a bias level corresponding to the ion implantation profile depth.