A semiconductor device with its package size close to its chip size has a
stress absorbing layer, allows a patterned flexible substrate to be
omitted, and allows a plurality of components to be fabricated
simultaneously. There is a step of forming electrodes (12) on a wafer
(10); a step of providing a resin layer (14) as a stress relieving layer
on the wafer (10), avoiding the electrodes (12); a step of forming a
chromium layer (16) as wiring from electrodes (12) over the resin layer
(14); a step of forming solder balls as external electrodes on the
chromium layer (16) over the resin layer (14); and a step of cutting the
wafer (10) into individual semiconductor chips; in the steps of forming
the chromium layer (16) and solder balls, metal thin film fabrication
technology is used during the wafer process.