A DFN semiconductor package is disclosed. The package includes a leadframe
having a die bonding pad formed integrally with a drain lead, a source
lead bonding area and a gate lead bonding area, the source lead bonding
area and the gate lead bonding area being of increased area, a die
coupled to the die bonding pad, a die source bonding area coupled to the
source lead bonding area and a die gate bonding area coupled to the gate
lead bonding area, and an encapsulant at least partially covering the
die, drain lead, gate lead bonding area and source lead bonding area.