A memory cell for storing a charge that gives rise to a cell voltage representing a bit value, the memory cell being capable of having the cell voltage boosted to a boost value at a time following reading of the stored charge. The memory cell includes a first capacitor connected between a first node and ground. A second capacitor is connected between a second node and ground, and a first switch is connected between the first node and the second node. A second switch and a third capacitor are connected in series between the first node and the second node, with a terminal of the second switch being connected to the first node, the common connection node of the second switch and the third capacitor comprising a third node. A third switch is connected between the third node and ground. In operation, in a first storage phase the first and third switches are closed and the second switch is open. In a second storage phase the first and third switches are open and the second switch is closed, resulting in the cell voltage being boosted to the boost value.