A method of making a semiconductor device includes providing a first wafer
and providing a second wafer having a first side and a second side, the
second wafer including a semiconductor substrate, a storage layer, and a
layer of gate material. The storage layer may be located between the
semiconductor structure and the layer of the gate material and the
storage layer may be located closer to the first side of the second wafer
than the semiconductor structure. The method further includes boding the
first side of the second wafer to the first wafer. The method further
includes removing a first portion of the semiconductor structure to leave
a layer of the semiconductor structure after the bonding. The method
further includes forming a transistor having a channel region, wherein at
least a portion of the channel region is formed from the layer of the
semiconductor structure.