A semiconductor device provided with a filled tetrahedral semiconductor is formed by introducing impurity atoms S for substituting the component atoms of sites of lattice points and impurity atoms I to be inserted into interstitial sites of a host semiconductor where component atoms are bonded to form a tetrahedral bonding structure. Such a semiconductor device is made to show a high mobility level and a high current drive force as a semiconductor substance where impurity atoms S are made to have a valance electron agreeing with that of the component atoms of the host semiconductor as a result of charge transfer between impurity atoms S and impurity atoms I and impurity atoms I are bonded in a state of showing an electronic arrangement of a closed shell structure is used as channel material.