In an embodiment of the present invention, a Trench MOSFET includes a trench region provided on a semiconductor substrate. The semiconductor substrate includes a P-type semiconductor substrate, a P-type semiconductor epitaxial layer, an N-type semiconductor body region, and a P-type semiconductor source diffusion. The substrate, the epitaxial layer, the body region, and the source diffusion are adjacently formed in this order. A P-type semiconductor channel region formed of a SiGe layer is provided on a bottom surface and a side wall of the trench region. This facilitates carrier movement in the channel region, reducing ON resistance of the Trench MOSFET. Thus, a Trench MOSFET allowing reduction in the ON resistance without reducing a breakdown voltage is realized.