A CMOS device is provided. A semiconductor device comprises a substrate, the substrate having a first region and a second region, the first region having a first crystal orientation represented by a family of Miller indices comprising {i,j,k}, the second region having a second crystal orientation represented a family of Miller indices comprising {l,m,n}, wherein l.sup.2+m.sup.2+n.sup.2>i.sup.2+j.sup.2+k.sup.2. Alternative embodiments further comprise an NMOSFET formed on the first region, and a PMOSFET formed on the second region. Embodiments further comprise a Schottky contact formed with at least one of a the NMOSFET or PMOSFET.

 
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