An improved atomic layer doping apparatus is disclosed as having multiple
doping regions in which individual monolayer species are first deposited
and then dopant atoms contained therein are diffused into the substrate.
Each doping region is chemically separated from adjacent doping regions. A
loading assembly is programmed to follow pre-defined transfer sequences
for moving semiconductor substrates into and out of the respective
adjacent doping regions. According to the number of doping regions
provided, a plurality of substrates could be simultaneously processed and
run through the cycle of doping regions until a desired doping profile is
obtained.
