A method for filling recessed micro-structures at a surface of a
semiconductor wafer with metallization is set forth. In accordance with
the method, a metal layer is deposited into the micro-structures with a
process, such as an electroplating process, that generates metal grains
that are sufficiently small so as to substantially fill the recessed
micro-structures. The deposited metal is subsequently subjected to an
annealing process at a temperature below about 100 degrees Celsius, and
may even take place at ambient room temperature to allow grain growth
which provides optimal electrical properties.
