A semiconductor integrated circuit is formed with a contact hole through
first and second interlayer insulating films. The contact hole contains
first and second high melting point metals forming a plug forming a recess
below an upper surface of the second interlayer insulating film. An
interconnection layer is formed in electrical connection with the metal
plug. In an embodiment of the present invention, the second insulating
film has a thickness greater than the depth of the recess. In another
embodiment of the present invention, the contact hole increases in
diameter toward the upper surface of the second insulating film thereby
enhancing filling of the contact hole with the first and second metals.
