SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof

   
   

A SnO.sub.2 ISFET device and manufacturing method thereof. The present invention prepares SnO.sub.2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO.sub.2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO.sub.2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO.sub.2 ISFET for different pH and hysteresis width of the SnO.sub.2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO.sub.2 ISFET.

Un método del dispositivo y de fabricación de SnO.sub.2 ISFET de eso. La actual invención prepara SnO.sub.2 como la membrana de la detección de un ISFET por tecnología del solenoide-gel para obtener un SnO.sub.2 ISFET. La actual invención también mide la curva current-voltage para el diversos pH y temperaturas por un sistema que mide actual. El parámetro de la temperatura del SnO.sub.2 ISFET se calcula según la relación entre la curva y la temperatura current-voltage. Además, el índice de la deriva del SnO.sub.2 ISFET para diverso pH y la anchura de la histéresis del SnO.sub.2 ISFET para diverso lazo del pH son calculados por un circuito constante de voltage/current y un registrador del voltaje-tiempo para medir el voltaje de la puerta del SnO.sub.2 ISFET.

 
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