Conductive contacts in a semiconductor structure, and methods for forming
the conductive components are provided. The contacts are useful for
providing electrical connection to active components beneath an insulation
layer in integrated circuits such as memory devices. The conductive
contacts comprise boron-doped TiCl.sub.4 -based titanium nitride, and
possess a sufficient level adhesion to the insulative layer to eliminate
peeling from the sidewalls of the contact opening and cracking of the
insulative layer when formed to a thickness of greater than about 200
angstroms.
