The present invention is a novel field effect transistor having a channel
region formed from a narrow bandgap semiconductor film formed on an
insulating substrate. A gate dielectric layer is formed on the narrow
bandgap semiconductor film. A gate electrode is then formed on the gate
dielectric. A pair of source/drain regions formed from a wide bandgap
semiconductor film or a metal is formed on opposite sides of the gate
electrode and adjacent to the low bandgap semiconductor film.
