Provided is a III-V compound semiconductor having a layer formed from a
first III-V compound semiconductor expressed by the general formula
In.sub.u Ga.sub.v Al.sub.w N (where 0.ltoreq.u.ltoreq.1,
0.ltoreq.v.ltoreq.1, 0.ltoreq.w.ltoreq.1, u+v+w=1), a pattern formed on
the layer from a material different not only from the first III-V compound
semiconductor but also from a second III-V compound semiconductor
hereinafter described, and a layer formed on the first III-V compound
semiconductor and the pattern from the second III-V compound semiconductor
expressed by the general formula In.sub.x Ga.sub.y Al.sub.z N (where
0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.x.ltoreq.1, x+y+z=1),
wherein the full width at half maximum of the (0004) reflection X-ray
rocking curve of the second III-V compound semiconductor is 700 seconds or
less regardless of the direction of X-ray incidence. In the III-V compound
semiconductor, which is a high quality semiconductor, the occurrence of
low angle grain boundaries is suppressed.
