Power-saving reading of magnetic memory devices. In one arrangement,
a method includes pulsing a voltage on the array, and obtaining a voltage value
indicative of a memory state of the target memory cell from the voltage pulse using
a sensing circuit that is electrically connected to the target memory cell. In
another arrangement, a method includes pulsing an array voltage on a plurality
of row and column conductors of the array, connecting a sensing circuit to a conductor
that is electrically coupled to the target memory cell, the sensing circuit including
a sense element, and determining the voltage drop across the sense element of the
sensing circuit during the voltage pulse, the voltage drop being indicative of
a memory state of the target memory cell.
