Disclosed is a method for correcting a transistor of a predetermined threshold
value. According to the method, after preparing a gate 13 of the transistor,
depending on how well the gate is prepared, a threshold voltage Vth showing transistor
characteristic is corrected by adjusting an oxygen concentration of a lamp-annealing
step 21, which is to be performed subsequently. Moreover, disclosed is a
method for fabricating a transistor of a predetermined threshold value. According
to the method, after preparing the gate 13 of the transistor, the threshold
voltage Vth showing the transistor characteristic is predicted or measured. When
the threshold voltage deviates from the predetermined value, the oxygen concentration
is adjusted in the lamp-annealing step 21 of the transistor that is to be
fabricated subsequently and thus the threshold value is set to the predetermined
value without lowered reliability due to the damage of the gate oxide film and
without additional process steps.
